Amorphous Boron Nitride Dielectric
Release time:
2018-10-06
A nanoelectronics structure is disclosed which includes a substrate
layer which has least a first surface and also has a thickness of less
than 100 nm. The nanoelectronics structure also includes a dielectric
layer, which is deposited on the first surface of the substrate layer
and has a thickness of less than 100 nm. This dielectric layer is made
up of at least 90 mole percent amorphous boron nitride. Also disclosed
is a method for forming a dielectric layer on a substrate using pulsed
laser deposition.
