Growth of two-dimensional materials on hexagonal boron nitride (h-BN)
Release time:
2018-11-30
With its atomically smooth surface yet no dangling bond, chemical inertness and high
temperature sustainability, the insulating hexagonal boron nitride (h-BN) can be an ideal
substrate for two-dimensional (2D) material growth and device measurement. In this review,
research progress on the chemical growth of 2D materials on h-BN has been summarized, such
as chemical vapor deposition and molecular beam epitaxy of graphene and various transition
metal dichalcogenides. Further, stacking of the as-grown 2D materials relative to h-BN, thermal
expansion matching between the deposited materials and h-BN, electrical property of 2D
materials on h-BN have been discussed in detail.
temperature sustainability, the insulating hexagonal boron nitride (h-BN) can be an ideal
substrate for two-dimensional (2D) material growth and device measurement. In this review,
research progress on the chemical growth of 2D materials on h-BN has been summarized, such
as chemical vapor deposition and molecular beam epitaxy of graphene and various transition
metal dichalcogenides. Further, stacking of the as-grown 2D materials relative to h-BN, thermal
expansion matching between the deposited materials and h-BN, electrical property of 2D
materials on h-BN have been discussed in detail.
